1.58 µm InGaAs quantum well laser on GaAs
Journal article, 2007

We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 µm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 µm GaAs-based lasers.


Ivar Tångring

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

H. Q. Ni

B.P. Wu

D.H. Wu

Y.H. Xiong

S.S. Huang

Z.C. Niu

Applied Physics Letters

Vol. 91 221101-

Subject Categories

Condensed Matter Physics

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