A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2009

We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.

Molecular beam epitaxy

Dislocations

Semiconducting III–V materials

Doping

Författare

Ivar Tångring

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 311 1684-

Ämneskategorier

Materialteknik

Fysik

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Skapat

2017-10-07