Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells
Journal article, 2015

The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells (SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence (PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PL peak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i) the low-energy component (LE) keeps energetically unchanged, while the high-energy component (HE) moves up with excitation and shows at higher energy for the In0.375Ga0.625As/GaAs but crosses over with the LE at a medium excitation power for the In0.375Ga0.625N0.012As0.988/GaAs SQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE and HE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAs shows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolution of PL energy with temperature is detectable, and similar blueshift and narrowing are identified for the same annealing. The phenomena are mainly from the interfacial processes. Annealing improves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacial fluctuation. The interfacial interdiffusion does not change obviously by the small N content and hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominally identical annealing. Comparison with previous studies is made and the PL measurements under different conditions are shown to be effective for probing the interfacial evolution in QWs.


Jun Shao

Chinese Academy of Sciences

Zhen Qi

Chinese Academy of Sciences

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Liang Zhu

Chinese Academy of Sciences

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

X Chen

Chinese Academy of Sciences


Shanghai University

Shaoling Guo

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 118 16 165305- 165305

Areas of Advance

Information and Communication Technology

Materials Science

Subject Categories

Materials Engineering


Nanofabrication Laboratory



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