Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells
Artikel i vetenskaplig tidskrift, 2015

The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells (SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence (PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PL peak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i) the low-energy component (LE) keeps energetically unchanged, while the high-energy component (HE) moves up with excitation and shows at higher energy for the In0.375Ga0.625As/GaAs but crosses over with the LE at a medium excitation power for the In0.375Ga0.625N0.012As0.988/GaAs SQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE and HE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAs shows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolution of PL energy with temperature is detectable, and similar blueshift and narrowing are identified for the same annealing. The phenomena are mainly from the interfacial processes. Annealing improves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacial fluctuation. The interfacial interdiffusion does not change obviously by the small N content and hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominally identical annealing. Comparison with previous studies is made and the PL measurements under different conditions are shown to be effective for probing the interfacial evolution in QWs.

Författare

Jun Shao

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Zhen Qi

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Liang Zhu

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

X Chen

Shanghai Institute of Technical Physics Chinese Academy of Sciences

F.X.Zha

Shanghai University

Shaoling Guo

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 118 165305- 165305

Styrkeområden

Informations- och kommunikationsteknik

Materialvetenskap

Ämneskategorier

Materialteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1063/1.4934523