Phase transition of bismuth telluride thin films grown by MBE
Journal article, 2014

A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.

Author

Attila Fülöp

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Sophie Charpentier

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Peixiong Shi

Technical University of Denmark (DTU)

Maria Ekström

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

luca galletti

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Riccardo Arpaia

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Applied Physics Express

1882-0778 (ISSN)

Vol. 7 Art. no. 045503-

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Areas of Advance

Materials Science

DOI

10.7567/APEX.7.045503