Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE
Paper in proceedings, 2010

Threading dislocation blocking by incorporating nitrogen in metamorphic InGaAs buffers on GaAs grown by MBE is demonstrated. This results in large enhancement of photoluminescence intensity from the metamorphic quantum wells.

threading dislocation

metamorphic

dilute nitride

Author

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

16th International Conference on Molecular Beam Epitaxy

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Created

10/6/2017