Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE
Paper i proceeding, 2010

Threading dislocation blocking by incorporating nitrogen in metamorphic InGaAs buffers on GaAs grown by MBE is demonstrated. This results in large enhancement of photoluminescence intensity from the metamorphic quantum wells.

threading dislocation

metamorphic

dilute nitride

Författare

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

16th International Conference on Molecular Beam Epitaxy

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