Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
Journal article, 2015

Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.

Raman scattering

molecular beam epitaxy

dilute bismides

InPBi

oscillator strength

Author

W. W. Pan

Chinese Academy of Sciences

J.A. Steele

University of Wollongong

P. Wang

Chinese Academy of Sciences

K. Wang

Chinese Academy of Sciences

Yuxin Song

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

X. Wu

Chinese Academy of Sciences

H. Xu

Chinese Academy of Sciences

Z. Zhang

Chinese Academy of Sciences

S. Xu

The University of Hong Kong

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

L. Wu

Beijing University of Posts and Telecommunications (BUPT)

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 30 9

Subject Categories

Manufacturing, Surface and Joining Technology

Nano Technology

DOI

10.1088/0268-1242/30/9/094003

More information

Latest update

5/23/2018