Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2016

The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties of InPBi grown by gas source molecular beam epitaxy have been systematically studied. Incorporation of Bi behaves like a dopant and its content increases linearly with Bi flux and inversely with the InP growth rate (In flux), and is independent of the PH3 pressure studied. High PH3 pressure causes rough surface and introduction of Bi improves surface quality. Intrinsic InP grown at a low temperature reveals n-type due to the P-ln antisite defects and the electron density is proportional to the PH3 pressure and inversely proportional to the InP growth rate. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but doesn't degrade the electron mobility for the Bi content up to 2.4%. These results suggest that there is still a large room left to optimize material quality and maximize Bi incorporation in InPBi using gas source molecular beam epitaxy.

Dilute bismides

Flux ratios

Growth rate

Molecular beam epitaxy



W. W. Pan

Chinese Academy of Sciences

P. Wang

Chinese Academy of Sciences

X. Y. Wu

Chinese Academy of Sciences

K. Wang

Chinese Academy of Sciences

J. Cui

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

L. Y. Zhang

Chinese Academy of Sciences

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Journal of Alloys and Compounds

0925-8388 (ISSN)

Vol. 656 777-783



Annan teknik



Mer information

Senast uppdaterat