Vanadium doping on magnetic properties of H-passivated ZnO nanowires
Artikel i vetenskaplig tidskrift, 2014

A comprehensive theoretical investigation on the electronic and magnetic properties of V-doped and H-passivated ZnO nanowires (NWs) was performed using spin-polarized density functional theory. The magnetic couplings of six configurations of V-doped ZnO NWs are studied in detail and stable ferromagnetism (FM) ordering is found in certain configurations. The FM mechanism originated from the strong hybridization of V 3d and O 2p around the Fermi level. Our results show that the uniaxial strain is an effective method to tune the magnetic properties of this material system. Room temperature ferromagnetism in these V-doped ZnO NWs indicates that these materials have a promising application in nanoscale spintronics.

1ST-PRINCIPLES

SEMICONDUCTORS

THIN-FILMS

ZINC-OXIDE

DESIGN

EPITAXIAL-GROWTH

Författare

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

X. L. Zhang

Beijing University of Posts and Telecommunications (BUPT)

H. W. Cao

Beijing University of Posts and Telecommunications (BUPT)

Z. Y. Yu

Beijing University of Posts and Telecommunications (BUPT)

N. N. Cai

Beijing University of Posts and Telecommunications (BUPT)

T. Gao

Sichuan University

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Materials Science

0022-2461 (ISSN) 1573-4803 (eISSN)

Vol. 49 8 3177-3182

Ämneskategorier

Fysik

DOI

10.1007/s10853-014-8020-y