Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm
Artikel i vetenskaplig tidskrift, 2007

Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed.

metamorphic

light emission

InGaAs quantum well

Författare

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Ivar Tangring

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Qinfen Gu

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Xiaodong Wang

Institute of Semiconductors Chinese Academy of Sciences

C.H. Ma

Institute of Semiconductors Chinese Academy of Sciences

I.A. Buyanova

Linköpings universitet

W.M. Chen

Linköpings universitet

Thin Solid Films

0040-6090 (ISSN)

Vol. 515 4348-4351

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/j.tsf.2006.07.098