Suspended GeSn microstructure for light source on Si
Paper i proceeding, 2017
A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. XRD and ?-Raman measurements show that the compressive strain in the GeSn thin film is effectively relaxed, and furthermore, unexpected tensile strain was introduced in the suspended GeSn.
Författare
Y. Han
Chinese Academy of Sciences
Y. Li
Chinese Academy of Sciences
Y. X. Song
Chinese Academy of Sciences
Z. P. Zhang
Chinese Academy of Sciences
ShanghaiTech University
J. J. Liu
Chinese Academy of Sciences
Z. Y. S. Zhu
Chinese Academy of Sciences
ShanghaiTech University
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Publicerad i
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, San Juan, Puerto Rico, 10-12 July 2017
s. 69-70
978-1-5090-6570-7 (ISBN)
Kategorisering
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
Identifikatorer
DOI
10.1109/PHOSST.2017.8012654
ISBN
978-1-5090-6570-7