Suspended GeSn microstructure for light source on Si
Paper i proceeding, 2017

A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. XRD and ?-Raman measurements show that the compressive strain in the GeSn thin film is effectively relaxed, and furthermore, unexpected tensile strain was introduced in the suspended GeSn.

Författare

Y. Han

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

Y. X. Song

Chinese Academy of Sciences

Z. P. Zhang

Chinese Academy of Sciences

ShanghaiTech University

J. J. Liu

Chinese Academy of Sciences

Z. Y. S. Zhu

Chinese Academy of Sciences

ShanghaiTech University

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, San Juan, Puerto Rico, 10-12 July 2017

69-70

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/PHOSST.2017.8012654

ISBN

978-1-5090-6570-7

Mer information

Senast uppdaterat

2018-05-23