Suspended GeSn microstructure for light source on Si
Paper in proceedings, 2017

A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. XRD and ?-Raman measurements show that the compressive strain in the GeSn thin film is effectively relaxed, and furthermore, unexpected tensile strain was introduced in the suspended GeSn.

Author

Y. Han

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

Y. X. Song

Chinese Academy of Sciences

Z. P. Zhang

Chinese Academy of Sciences

ShanghaiTech University

J. J. Liu

Chinese Academy of Sciences

Z. Y. S. Zhu

Chinese Academy of Sciences

ShanghaiTech University

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, San Juan, Puerto Rico, 10-12 July 2017

69-70

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/PHOSST.2017.8012654

ISBN

978-1-5090-6570-7

More information

Latest update

5/23/2018