GeSn/Ge dual-nanowire heterostructure
Paper i proceeding, 2017

A dual-nanowire heterostructure with a GeSn layer laterally laying on Ge nanowires is demonstrated by MBE. The strain field analyzed by FEM shows that the novel proposal can significantly release the compressive strain in GeSn for potential direct bandgap conversion as a Si-based light source.

FEM

dual-nanowire heterostructure

light source

GeSn

strain

MBE

direct bandgap

Författare

Z. Y. S. Zhu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

ShanghaiTech University

yuxin song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yi Han

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yaoyao Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Z. Zhang

ShanghaiTech University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Liyao Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017

71-72

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/PHOSST.2017.8012655

ISBN

978-150906570-7