GeSn/Ge dual-nanowire heterostructure
Paper i proceeding, 2017
A dual-nanowire heterostructure with a GeSn layer laterally laying on Ge nanowires is demonstrated by MBE. The strain field analyzed by FEM shows that the novel proposal can significantly release the compressive strain in GeSn for potential direct bandgap conversion as a Si-based light source.
MBE
dual-nanowire heterostructure
strain
FEM
direct bandgap
GeSn
light source
Författare
Z. Y. S. Zhu
ShanghaiTech University
Chinese Academy of Sciences
yuxin song
Chinese Academy of Sciences
Yi Han
Chinese Academy of Sciences
Yaoyao Li
Chinese Academy of Sciences
Z. Zhang
Chinese Academy of Sciences
ShanghaiTech University
Liyao Zhang
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017
71-72
978-150906570-7 (ISBN)
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1109/PHOSST.2017.8012655
ISBN
978-150906570-7