Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
Artikel i vetenskaplig tidskrift, 2022
Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.
GaSb/Si
ion-slicing technique
InP/Si
heterogeneous integration
selective chemical etching
MBE
Författare
Tingting Jin
Chinese Academy of Sciences
Jiajie Lin
Jiaxing University
Tiangui You
Chinese Academy of Sciences
Xiaolei Zhang
ShanghaiTech University
Chinese Academy of Sciences
Hao Liang
Chinese Academy of Sciences
Yifan Zhu
Chinese Academy of Sciences
Jialiang Sun
Chinese Academy of Sciences
Hangning Shi
Chinese Academy of Sciences
Chaodan Chi
Chinese Academy of Sciences
Min Zhou
Chinese Academy of Sciences
R Kudrawiec
Politechnika Wrocławska
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Xin Ou
Chinese Academy of Sciences
Science China Information Sciences
1674-733X (ISSN) 18691919 (eISSN)
Vol. 65 8 182402Ämneskategorier
Materialkemi
Annan materialteknik
Den kondenserade materiens fysik
DOI
10.1007/s11432-021-3398-y