Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
Artikel i vetenskaplig tidskrift, 2017

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

III-N-Bi

III-Sb-Bi

MBE

III-As-Bi

droplet

III-P-Bi

surfactant

dilute bismide

MOCVD

Författare

L Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

L. Y. Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

L. Yue

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

D. Liang

Beijing University of Posts and Telecommunications

X Chen

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

P. F. Lu

Beijing University of Posts and Telecommunications

J. Shao

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Crystals

2073-4352 (ISSN)

Vol. 7 Article no 63 -

Ämneskategorier

Materialteknik

DOI

10.3390/cryst7030063