Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
Reviewartikel, 2017
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.
III-N-Bi
dilute bismide
III-Sb-Bi
droplet
MOCVD
III-P-Bi
surfactant
III-As-Bi
MBE
Författare
L Wang
Chinese Academy of Sciences
L. Y. Zhang
Chinese Academy of Sciences
L. Yue
Chinese Academy of Sciences
D. Liang
Beijing University of Posts and Telecommunications (BUPT)
X Chen
Chinese Academy of Sciences
Y. Li
Chinese Academy of Sciences
P. F. Lu
Beijing University of Posts and Telecommunications (BUPT)
J. Shao
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Crystals
2073-4352 (ISSN)
Vol. 7 3 Article no 63 - 63Ämneskategorier
Materialteknik
DOI
10.3390/cryst7030063