Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films
Artikel i vetenskaplig tidskrift, 2018

Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is demonstrated that reducing the V/III ratio facilitates Bi incorporation into GaSb effectively. The highest average Bi content up to 11% with locally up to 13% is achieved, confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). X-ray diffraction and TEM show perfect crystal quality for the GaSb 1–x Bi x film with x = 5.6%. The composition dependence room temperature photoluminescence (PL) spectra of the GaSb 1–x Bi x alloys with 0 < x ≤ 13% are reported for the first time. The band-gap energy decreases effectively with increasing the Bi content and in the range of 1 ≤ x ≤ 5.6%, the linear decreasing rate is 37 meV/Bi%. For the highest Bi content GaSb 1–x Bi x , the PL peak energy reaches 0.41 eV (3.0 μm), indicating that GaSb 1–x Bi x alloy has potentials in mid-infrared optoelectronic applications.

V/III ratio


Molecular beam epitaxy growth

Bi incorporation

Structural properties

Optical properties


L. Yue

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Yanchao Zhang

ShanghaiTech University

Chinese Academy of Sciences

F Zhang

Chinese Academy of Sciences

L Wang

Chinese Academy of Sciences

Jun Shao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chinese Academy of Sciences

Journal of Alloys and Compounds

0925-8388 (ISSN)

Vol. 742 780-789


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