Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films
Artikel i vetenskaplig tidskrift, 2018

Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is demonstrated that reducing the V/III ratio facilitates Bi incorporation into GaSb effectively. The highest average Bi content up to 11% with locally up to 13% is achieved, confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). X-ray diffraction and TEM show perfect crystal quality for the GaSb 1–x Bi x film with x = 5.6%. The composition dependence room temperature photoluminescence (PL) spectra of the GaSb 1–x Bi x alloys with 0 < x ≤ 13% are reported for the first time. The band-gap energy decreases effectively with increasing the Bi content and in the range of 1 ≤ x ≤ 5.6%, the linear decreasing rate is 37 meV/Bi%. For the highest Bi content GaSb 1–x Bi x , the PL peak energy reaches 0.41 eV (3.0 μm), indicating that GaSb 1–x Bi x alloy has potentials in mid-infrared optoelectronic applications.

V/III ratio

Molecular beam epitaxy growth

Structural properties

Optical properties

GaSbBi

Bi incorporation

Författare

L. Yue

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

X Chen

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yanchao Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

ShanghaiTech University

F Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shanghai Institute of Technical Physics Chinese Academy of Sciences

L Wang

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Jun Shao

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Journal of Alloys and Compounds

0925-8388 (ISSN)

Vol. 742 780-789

Ämneskategorier

Oorganisk kemi

Materialkemi

Den kondenserade materiens fysik

DOI

10.1016/j.jallcom.2018.01.329