Dilute bismide and nitride alloys for mid-IR optoelectronic devices
Kapitel i bok, 2019

Dilute bismide and nitride provide flexible bandgap and strain engineering, owing to their unique physical properties, and are attractive for mid-IR (2-12 µm) optoelectronic device applications. In this chapter, we review progresses of theoretical simulations, epitaxial growth, material characterizations, and devices of dilute bismides including GaSbBi, AlSbBi, InAsBi, InAsSbBi, InGaAsBi, and InSbBi, as well as dilute nitrides including InNAs, GaNSb, InNSb, GaInNAs, and InNAsSb. The overview mainly focuses on growth optimization, optical characterizations, and theoretical calculations ending with outlook remarks about advantages and main challenges of both exotic materials.

Molecular beam epitaxy

Dilute nitride

Metalorganic vapor phase deposition

Mid-IR optoelectronic device

Dilute bismide

Författare

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chinese Academy of Sciences

R Kudrawiec

Politechnika Wrocławska

Chaodan Chia

Chinese Academy of Sciences

Liping Zhang

Chinese Academy of Sciences

Xiaolei Zhang

ShanghaiTech University

Xin Ou

Chinese Academy of Sciences

Mid-infrared Optoelectronics: Materials, Devices, and Applications

457-492

Ämneskategorier

Annan fysik

Annan materialteknik

Den kondenserade materiens fysik

DOI

10.1016/B978-0-08-102709-7.00011-5

Mer information

Senast uppdaterat

2020-12-08