Strain induced composition profile in InGaN/GaN core-shell nanowires
Artikel i vetenskaplig tidskrift, 2014

A theoretical investigation on explanation of the composition profile in triangular and hexagonal cross-sections of InGaN/GaN core-shell nanowires is presented by combining the finite elements method (FEM) and method of moving asymptotes (MMA) in the framework of thermodynamics. Our models can account for strain effect on indium composition. In both models, the maximum indium content through segregation arises either at the side length or at the corner of the InGaN shell. The simulated results are found in good agreement with those of experimental data, thus providing a good guidance for the growth of high indium concentration of InGaN/GaN core-shell nanowires.


P. F. Lu

Ministry of Education China

Chao Sun

Ministry of Education China

H. W. Cao

Ministry of Education China

Han Ye

Ministry of Education China

Xuxia Zhong

Ministry of Education China

Z. Y. Yu

Ministry of Education China

Lihong Han

Ministry of Education China

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Solid State Communications

0038-1098 (ISSN)

Vol. 178 1-6





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