Thermoelectric properties of SnSe compound
Artikel i vetenskaplig tidskrift, 2015

A first-principles study and Boltzmann transport theory have been performed to evaluate the electronic structure and thermoelectric properties of SnSe compound. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential or temperature within the assumption of the constant relaxation time. The figure of merit ZT is obtained with the use of calculated thermoelectric properties and can reach as high as 1.87 along yy and 1.6 along zz direction at 800k. Our theoretical result agrees well with previous experimental data.

Electronic structure

Figure of merit

SnSe

Thermoelectric properties

Författare

X. H. Guan

Beijing University of Posts and Telecommunications (BUPT)

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

L. Wu

Beijing University of Posts and Telecommunications (BUPT)

L. H. Han

Beijing University of Posts and Telecommunications (BUPT)

G. Liu

Beijing University of Posts and Telecommunications (BUPT)

Y. X. Song

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Alloys and Compounds

0925-8388 (ISSN)

Vol. 643 116-120

Ämneskategorier

Metallurgi och metalliska material

DOI

10.1016/j.jallcom.2015.04.073