Dilute bismides for near and mid-infrared applications
Paper i proceeding, 2013

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized. © 2013 IEEE.

InGaAsBi

dilute bismide

infrared

MBE

InSbBi

GaSbBi

Författare

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yi Gu

Chinese Academy of Sciences

Hong Ye

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Peixiong Shi

Danmarks Tekniske Universitet (DTU)

A. Hallen

Kungliga Tekniska Högskolan (KTH)

X Chen

Chinese Academy of Sciences

Jun Shao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

International Conference on Transparent Optical Networks

2162-7339 (eISSN)

Ämneskategorier

Fysik

DOI

10.1109/ICTON.2013.6602735

ISBN

978-1-4799-0682-6