Electronic properties and band offsets in InP(1-x-y) BixNy
Artikel i vetenskaplig tidskrift, 2019

Electronic band structures of InP(1-x-y)BixNy have been theoretically studied by using Conduction Band Anticrossing (CBAC) model and Valence Band Anticrossing model (VBAC) in conjugation with k . p method. This mathematical model's manifestation is a 16 band Hamiltonian matrix. Our results reveal that the addition of Bi and N to InP causes substantial reduction of band gap, and the conduction band offset is greater than valence band offset. It can provide better electronic confinement and improve the temperature-insensitive characteristics for optoelectronic devices. Material compositions and band gap under various strain conditions have also been added in our calculation. By adjusting the concentration of Bi and N, we obtained a strong control of conduction band edge and valence band edge, which increases the flexibility of design InPBiN/InP structures.

k . p method

InPBiN alloy

band offsets

band anti-crossing model

Författare

Kailin Wang

Beijing University of Posts and Telecommunications (BUPT)

Dan Liang

Beijing University of Posts and Telecommunications (BUPT)

Yang Li

Beijing University of Posts and Telecommunications (BUPT)

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Ming Lei

Beijing University of Posts and Telecommunications (BUPT)

Shanjun Li

Sichuan University

Pengfei Lu

Beijing University of Posts and Telecommunications (BUPT)

Modern Physics Letters B

0217-9849 (ISSN)

Vol. 33 6 1950058

Ämneskategorier

Annan fysik

Den kondenserade materiens fysik

DOI

10.1142/S0217984919500581

Mer information

Senast uppdaterat

2019-08-26