Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017

InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm

kp method


molecular beam epitaxy


type-II quantum well


Wenwu Pan

Chinese Academy of Sciences

Liyao Zhang

Chinese Academy of Sciences

Liang Zhu

Chinese Academy of Sciences

yuxin song

Chinese Academy of Sciences

Yaoyao Li

Chinese Academy of Sciences

Chang Wang

ShanghaiTech University

Peng Wang

Chinese Academy of Sciences

Xiaoyan Wu

Chinese Academy of Sciences

Fan Zhang

ShanghaiTech University

Jun Shao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 32 1 015007





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