Temperature stability of intersubband transitions in AlN/GaN quantum wells
Artikel i vetenskaplig tidskrift, 2010
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 degrees C. The self-consistent Schroumldinger-Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by similar to 6 meV at 400 degrees C relative to its room temperature value.
Poisson equation
piezoelectricity
thermal expansion
Schrodinger equation
photoluminescence
semiconductor quantum wells
gallium compounds
molecular beam epitaxial growth
semiconductor heterojunctions
conduction bands
heat treatment
SCF calculations
III-V semiconductors
aluminium compounds
Författare
Kristian Berland
Chalmers, Teknisk fysik, Elektronikmaterial
Martin Stattin
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Rashid Farivar
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
D. M. S. Sultan
Chalmers, Mikroteknologi och nanovetenskap
Per Hyldgaard
Chalmers, Teknisk fysik, Elektronikmaterial
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Thorvald Andersson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 97 4 043507- 043507Styrkeområden
Informations- och kommunikationsteknik
Materialvetenskap
Ämneskategorier
Materialteknik
Annan materialteknik
Den kondenserade materiens fysik
Drivkrafter
Innovation och entreprenörskap
DOI
10.1063/1.3456528