Thorvald Andersson

Visar 41 publikationer

2015

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

David Adolph, Tobias Tingberg, Thorvald Andersson et al
Frontiers of Materials Science. Vol. 9 (2), p. 185-191
Artikel i vetenskaplig tidskrift
2012

On the polarized emission from exciton complexes in GaN quantum dots

S. Amloy, F. Karlsson, Thorvald Andersson et al
Applied Physics Letters. Vol. 100 (2)
Artikel i vetenskaplig tidskrift
2012

Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN

H. Akabli, A. Almaggoussi, A. Abounadi et al
Superlattices and Microstructures. Vol. 52 (1), p. 70-77
Artikel i vetenskaplig tidskrift
2012

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Tommy Ive, Kristian Berland, Martin Stattin et al
Japanese Journal of Applied Physics. Vol. 51 (1), p. Article Number: 01AG07 -
Artikel i vetenskaplig tidskrift
2011

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Thorvald Andersson, Kristian Berland, Rashid Farivar et al
ISPlasma 2011, March 6-9, 2011 Nagoya, Japan
Poster (konferens)
2011

Waveguides for nitride based quantum cascade lasers

Martin Stattin, Kristian Berland, Per Hyldgaard et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (7-8), p. 2357-2359
Artikel i vetenskaplig tidskrift
2011

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

Kristian Berland, Thorvald Andersson, Per Hyldgaard
Physical Review B - Condensed Matter and Materials Physics. Vol. 84 (24)
Artikel i vetenskaplig tidskrift
2011

Size dependent biexciton binding energies in GaN quantum dots

S. Amloy, K. H. Yu, F. Karlsson et al
Applied Physics Letters. Vol. 99 (25)
Artikel i vetenskaplig tidskrift
2011

Polarized emission from single GaN quantum dots grown by molecular beam epitaxy

S. Amloy, K. H. Yu, K. Fredrik Karlsson et al
AIP Conference Proceedings. Vol. 1399, p. 541-542
Paper i proceeding
2010

Temperature stability of intersubband transitions in AlN/GaN quantum wells

Kristian Berland, Martin Stattin, Rashid Farivar et al
Applied Physics Letters. Vol. 97 (4), p. 043507-
Artikel i vetenskaplig tidskrift
2010

Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy

Rashid Farivar, Thorvald Andersson
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 7 (1), p. 25-27
Paper i proceeding
2010

Initial rise of transient electroluminescence in doped Alq(3) films

A. Uddin, C. B. Lee, Thorvald Andersson
Physica Status Solidi (A) Applications and Materials. Vol. 207 (10), p. 2334-2338
Artikel i vetenskaplig tidskrift
2010

Waveguides for Nitride Based Quantum Cascade Lasers

Martin Stattin, Kristian Berland, Per Hyldgaard et al
International Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, U.S.A., September 19 – 24, 2010
Poster (konferens)
2009

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Thorvald Andersson, Xinju Liu, T. Aggerstam et al
Microelectronics. Vol. 40 (2), p. 360-362
Artikel i vetenskaplig tidskrift
2008

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Xinju Liu, T. Aggerstam, P. Holmstrom et al
Journal of Physics: Conference Series. Vol. 100 (PART 4)
Paper i proceeding
2008

Porphyrin doping of Alq3 for electroluminescence

Måns Andreasson, Jerker Mårtensson, Thorvald Andersson
Current Applied Physics. Vol. 8, p. 163-166
Artikel i vetenskaplig tidskrift
2007

Encapsulation of OLED device by Using Anisotropic Conductive Adhesive

Yan Zhang, Måns Andreasson, Hua Zhou et al
Proceedings of 2007 International Symposium on High Density Packaging and Microsystem Integration, p. 314-317
Paper i proceeding
2007

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy

Xinju Liu, Peter Jänes, Petter Holmström et al
Journal of Crystal Growth. Vol. 300 (1), p. 79-
Artikel i vetenskaplig tidskrift
2007

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 um intersubband absorption

Thomas Aggerstam, Thorvald Andersson, Petter Holmström et al
Quantum Sensing and Nanophotonic Devices IV, Manijeh Razeghi; Gail J. Brown, Editors,. Vol. 6479, p. 64791E-
Paper i proceeding
2007

Intersubband absorption at 1.5-3.5 um in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Xinju Liu, Petter Holmström, Peter Jänes et al
Physica Status Solidi (B): Basic Research. Vol. 244 (8), p. 2892-
Artikel i vetenskaplig tidskrift
2007

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq(3) films

C. B. Lee, A. Uddin, Thorvald Andersson
Solid State Communications. Vol. 142 (4), p. 206-211
Artikel i vetenskaplig tidskrift
2007

Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Thorvald Andersson, Måns Andreasson, Uta Klement et al
Materials Science and Engineering B. Vol. 145, p. 48-56
Artikel i vetenskaplig tidskrift
2007

Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Xinju Liu, Thomas Aggerstam, Peter Jänes et al
Journal of Crystal Growth. Vol. 301-302, p. 457-
Artikel i vetenskaplig tidskrift
2007

Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Xinju Liu, H.F. Liu, A. Uddin et al
Journal of Crystal Growth. Vol. 300 (1), p. 114-
Artikel i vetenskaplig tidskrift
2006

[M]. Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al
Thin solid films. Vol. 515, p. 603-
Artikel i vetenskaplig tidskrift
2006

Organic molecular beam deposition system and initial studies of organic layer growth

Måns Andreasson, Lars Ilver, Janusz Kanski et al
Physica Scripta. Vol. T126, p. 1-5
Artikel i vetenskaplig tidskrift
2006

[L]. GaN grown on sapphire, Si and GaN substrates by molecular beam epitaxy

Xinju Liu, Thomas Aggerstam, Sebastian Lourdudoss et al
Proceedings for 30th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, p. 213-
Paper i proceeding
2005

Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al
applied physics letters. Vol. 87, p. 161901-
Artikel i vetenskaplig tidskrift
2005

Subband transitions in AlxGa1-xN/GaN/AlxGa1-xN and AlxGa1-xN/InN/AlxGa1-xN single quantum wells

K Premaratne, Manjula Gurusinghe, Thorvald Andersson
Superlattices and microstructures,. Vol. 38, p. 161-
Artikel i vetenskaplig tidskrift
2005

Importance of ITO surface conditions for the interaction with thin CuPc layers

Måns Andreasson, Maria Tengelin-Nilsson, Thorvald Andersson et al
Organic Electronics: physics, materials, applications (6), p. 175-181
Artikel i vetenskaplig tidskrift
2005

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Xinju Liu, Fredrik Fälth, Thorvald Andersson et al
Journal of Crystal Growth. Vol. 278, p. 397-
Artikel i vetenskaplig tidskrift
2005

[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Stefan Davidsson, Fredrik Fälth, Xinju Liu et al
Journal of applied physics. Vol. 98 (1), p. 16109-
Artikel i vetenskaplig tidskrift
2005

Influence of dislocation density on photoluminescence intensity of GaN

Fredrik Fälth, Manjula Gurusinghe, Xinju Liu et al
Journal of crystal growth. Vol. 278, p. 406-
Artikel i vetenskaplig tidskrift
2005

Interface study of AlN grown on Si substrates by radio frequency magnetron reactive sputtering

Thorvald Andersson
Thin Solid Films. Vol. 471, p. 336-
Artikel i vetenskaplig tidskrift
2005

Two-dimensional electron mobility limitation mechanisms in AlxGa1-xN/GaN hetero¬structures

Manjula Gurusinghe, Stefan Davidsson, Thorvald Andersson
Physical review. Vol. 00, p. 00-
Artikel i vetenskaplig tidskrift
2005

Study of degradation mechanism of blue light emitting diodes

Thorvald Andersson
Thin Solid Films. Vol. 483, p. 378-
Artikel i vetenskaplig tidskrift
2004

Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Xinju Liu, Thorvald Andersson
applied surface science. Vol. 226, p. 331-
Artikel i vetenskaplig tidskrift
2003

Inductively Coupled Plasma Etching of GaN Mesa Structures for Microphotoluminescence

Toshio Kawahara, Fredrik Fälth, Xinju Liu et al
Proceedings of the 2nd IMP3 conference
Paper i proceeding
2001

Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

Otto Zsebök, Jan Thordson, Bengt Nilsson et al
Nanotechnology. Vol. 12, p. 32-7
Artikel i vetenskaplig tidskrift
1993

Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

Niklas Rorsman, Christer Karlsson, Herbert Zirath et al
23rd European Solid State Device Research Conference, ESSDERC 1993, p. 765-768
Paper i proceeding
1987

Resistance in sub-m size GaAs lines

A. Rouhani-Kalleh, Thorvald Andersson, Bengt Nilsson et al
Superlattices and Microstructures. Vol. 3 (4), p. 417-419
Artikel i vetenskaplig tidskrift

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