Thorvald Andersson

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN

2012

On the polarized emission from exciton complexes in GaN quantum dots

Waveguides for nitride based quantum cascade lasers

2011

Size dependent biexciton binding energies in GaN quantum dots

Polarized emission from single GaN quantum dots grown by molecular beam epitaxy

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

2011

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

2010

Temperature stability of intersubband transitions in AlN/GaN quantum wells

Waveguides for Nitride Based Quantum Cascade Lasers

Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy

Initial rise of transient electroluminescence in doped Alq(3) films

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Porphyrin doping of Alq3 for electroluminescence

2008

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Intersubband absorption at 1.5-3.5 um in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 um intersubband absorption

Encapsulation of OLED device by Using Anisotropic Conductive Adhesive

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq(3) films

Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

[M]. Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

[L]. GaN grown on sapphire, Si and GaN substrates by molecular beam epitaxy

Organic molecular beam deposition system and initial studies of organic layer growth

Study of degradation mechanism of blue light emitting diodes

Influence of dislocation density on photoluminescence intensity of GaN

[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Two-dimensional electron mobility limitation mechanisms in AlxGa1-xN/GaN hetero¬structures

Interface study of AlN grown on Si substrates by radio frequency magnetron reactive sputtering

Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Subband transitions in AlxGa1-xN/GaN/AlxGa1-xN and AlxGa1-xN/InN/AlxGa1-xN single quantum wells

Importance of ITO surface conditions for the interaction with thin CuPc layers

Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Inductively Coupled Plasma Etching of GaN Mesa Structures for Microphotoluminescence

Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

Resistance in sub-m size GaAs lines