Size dependent biexciton binding energies in GaN quantum dots
Artikel i vetenskaplig tidskrift, 2011

Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (similar to 90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing.



S. Amloy

Linköpings universitet

Thaksin University

K. H. Yu

Linköpings universitet

F. Karlsson

Linköpings universitet

Rashid Farivar

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

P. O. Holtz

Linköpings universitet

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 99 251903