Size dependent biexciton binding energies in GaN quantum dots
Journal article, 2011

Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (similar to 90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing.



S. Amloy

Linköping University

Thaksin University

K. H. Yu

Linköping University

F. Karlsson

Linköping University

Rashid Farivar

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

P. O. Holtz

Linköping University

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 99 25 251903

Subject Categories

Physical Sciences



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