Rashid Farivar

Showing 7 publications


Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Thorvald Andersson, Kristian Berland, Rashid Farivar et al
ISPlasma 2011, March 6-9, 2011 Nagoya, Japan
Conference poster

Size dependent biexciton binding energies in GaN quantum dots

S. Amloy, K. H. Yu, F. Karlsson et al
Applied Physics Letters. Vol. 99 (25)
Journal article

Polarized emission from single GaN quantum dots grown by molecular beam epitaxy

S. Amloy, K. H. Yu, K. Fredrik Karlsson et al
AIP Conference Proceedings. Vol. 1399, p. 541-542
Paper in proceedings

Temperature stability of intersubband transitions in AlN/GaN quantum wells

Kristian Berland, Martin Stattin, Rashid Farivar et al
Applied Physics Letters. Vol. 97 (4), p. 043507-
Journal article

Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy

Rashid Farivar, Thorvald Andersson
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 7 (1), p. 25-27
Paper in proceedings

Evaluation of Using Active Circuitry for Substrate Noise Suppression

Rashid Farivar, Simon Kristiansson, Fredrik Ingvarson et al
ACM Great Lakes Symposium on VLSI (GLSVLSI), p. 449-452
Paper in proceedings

Substrate Noise Reduction Using Active Circuitry

Rashid Farivar, Simon Kristiansson, Fredrik Ingvarson et al
Swedish System on Chip Conference
Conference contribution

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