Polarized emission from single GaN quantum dots grown by molecular beam epitaxy
Paper in proceedings, 2011

Polarization resolved microphotoluminescence measurements of single MBE-grown GaN/Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as < 500μeV were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built-in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence-band mixing induced by in-plane anisotropy due to strain and/or QD shape. © 2011 American Institute of Physics.


S. Amloy

Linköping University

Thaksin University

K. H. Yu

Linköping University

K. Fredrik Karlsson

Linköping University

Rashid Farivar

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per Olof Holtz

Linköping University

AIP Conference Proceedings

0094-243X (ISSN) 1551-7616 (eISSN)

Vol. 1399 541-542

Subject Categories

Physical Sciences





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