Polarized emission from single GaN quantum dots grown by molecular beam epitaxy
Paper i proceeding, 2011

Polarization resolved microphotoluminescence measurements of single MBE-grown GaN/Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as < 500μeV were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built-in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence-band mixing induced by in-plane anisotropy due to strain and/or QD shape. © 2011 American Institute of Physics.


S. Amloy

Linköpings universitet

Thaksin University

K. H. Yu

Linköpings universitet

K. Fredrik Karlsson

Linköpings universitet

Rashid Farivar

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Per Olof Holtz

Linköpings universitet

AIP Conference Proceedings

0094-243X (ISSN) 1551-7616 (eISSN)

Vol. 1399 541-542
978-073541002-2 (ISBN)







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