Polarized emission from single GaN quantum dots grown by molecular beam epitaxy
Paper i proceeding, 2011
Polarization resolved microphotoluminescence measurements of single MBE-grown GaN/Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as < 500μeV were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built-in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence-band mixing induced by in-plane anisotropy due to strain and/or QD shape. © 2011 American Institute of Physics.