Temperature stability of intersubband transitions in AlN/GaN quantum wells
Journal article, 2010
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 degrees C. The self-consistent Schroumldinger-Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by similar to 6 meV at 400 degrees C relative to its room temperature value.
Poisson equation
piezoelectricity
thermal expansion
Schrodinger equation
photoluminescence
semiconductor quantum wells
gallium compounds
molecular beam epitaxial growth
semiconductor heterojunctions
conduction bands
heat treatment
SCF calculations
III-V semiconductors
aluminium compounds
Author
Kristian Berland
Chalmers, Applied Physics, Electronics Material and Systems
Martin Stattin
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Rashid Farivar
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
D. M. S. Sultan
Chalmers, Microtechnology and Nanoscience (MC2)
Per Hyldgaard
Chalmers, Applied Physics, Electronics Material and Systems
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Thorvald Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 97 4 043507- 043507Areas of Advance
Information and Communication Technology
Materials Science
Subject Categories
Materials Engineering
Other Materials Engineering
Condensed Matter Physics
Driving Forces
Innovation and entrepreneurship
DOI
10.1063/1.3456528