Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate
Paper i proceeding, 1993

InAlAs/InGaAs HFETs having very high indium content (80 and 100%) in the channel have been fabricated on GaAs and electrically characterized. The extrinsic transconductance were 310 mS/mm (560 mS/mm at 77 K), and the saturation current were 700 mA/mm (600 mA/mm at 77 K) for an InAs channel. The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively. The In0.8Ga 0.2As channel material had extrinsic transconductance of 320 mS/mm (470 mS/mm at 77 K), and the saturation current were 520 mA/mm (440 mA/mm at 77K). The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively

Författare

Niklas Rorsman

Institutionen för mikrovågsteknik

Christer Karlsson

Institutionen för mikrovågsteknik

Herbert Zirath

Institutionen för mikrovågsteknik

Shu Min Wang

Fysiska institutionen

Thorvald Andersson

Institutionen för fysik

23rd European Solid State Device Research Conference, ESSDERC 1993

1930-8876 (ISSN)

765-768

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

ISBN

978-286332135-5