Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate
Paper in proceeding, 1993

InAlAs/InGaAs HFETs having very high indium content (80 and 100%) in the channel have been fabricated on GaAs and electrically characterized. The extrinsic transconductance were 310 mS/mm (560 mS/mm at 77 K), and the saturation current were 700 mA/mm (600 mA/mm at 77 K) for an InAs channel. The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively. The In0.8Ga 0.2As channel material had extrinsic transconductance of 320 mS/mm (470 mS/mm at 77 K), and the saturation current were 520 mA/mm (440 mA/mm at 77K). The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively

Author

Niklas Rorsman

Department of Microwave Technology

Christer Karlsson

Department of Microwave Technology

Herbert Zirath

Department of Microwave Technology

Shu Min Wang

Department of Physics

Thorvald Andersson

Department of Physics

23rd European Solid State Device Research Conference, ESSDERC 1993

1930-8876 (ISSN)

765-768
978-286332135-5 (ISBN)

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-286332135-5

More information

Created

10/7/2017