Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate
Paper in proceeding, 1993
Author
Niklas Rorsman
Department of Microwave Technology
Christer Karlsson
Department of Microwave Technology
Herbert Zirath
Department of Microwave Technology
Shu Min Wang
Department of Physics
Thorvald Andersson
Department of Physics
23rd European Solid State Device Research Conference, ESSDERC 1993
1930-8876 (ISSN)
765-768978-286332135-5 (ISBN)
Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-286332135-5