Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2007
Ten period GaN/AlN multiple quantum well (MQW) structures were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates and metal-organic vapour-phase epitaxy (MOVPE)-grown GaN templates. Samples were investigated by high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared (FT-IR) spectroscopy. Intersubband (IS) absorbances and FWHM of IS absorption peaks indicated that samples grown on the GaN templates had better characteristics, resulting in a FWHM as low as 93 meV at a peak energy of 700 meV.
A3. Molecular beam epitaxy
A3. Quantum wells
A1. High-resolution X-ray diffraction