Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2007

Ten period GaN/AlN multiple quantum well (MQW) structures were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates and metal-organic vapour-phase epitaxy (MOVPE)-grown GaN templates. Samples were investigated by high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared (FT-IR) spectroscopy. Intersubband (IS) absorbances and FWHM of IS absorption peaks indicated that samples grown on the GaN templates had better characteristics, resulting in a FWHM as low as 93 meV at a peak energy of 700 meV.

A3. Molecular beam epitaxy

A3. Quantum wells

A1. High-resolution X-ray diffraction

B1. Nitrides

Författare

Xinju Liu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Thomas Aggerstam

Peter Jänes

Petter Holmström

Sebastian Lourdudoss

Lars Thylén

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 301-302 457-

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2017-10-08