Organic molecular beam deposition system and initial studies of organic layer growth
Artikel i vetenskaplig tidskrift, 2006

This work describes an organic molecular beam deposition system with substrate entry/exit chamber, buffer chamber and with the possibility to transfer substrate from a III–V molecular beam deposition system. Flux calibrations of organic molecules and the initial growth of organic layers are described. For this purpose, the molecules 3,4,9,10 perylene tetra carboxylic dianhydride and copper phtalocyanine were used. Layers were grown on oxidized and hydrogen passivated Si(100), Indium tin oxide and glass respectively. The growth was investigated with atomic force microscopy, reflection high energy electron diffraction and ultraviolet photoemission spectroscopy. An investigation with x-ray photoelectron and Raman spectroscopy on the effect of atmospheric exposure is also included, showing little effect of surface pollution when the samples were handled carefully. The initial formation (monolayers) of copper phtalocyanine thin films was studied by ultraviolet photoemission spectroscopy.


Organic semiconductors




Måns Andreasson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Lars Ilver

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Physica Scripta

00318949 (ISSN) 14024896 (eISSN)

Vol. T126 1-5


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