Janusz Kanski

Biträdande professor vid Chalmers, Fysik

Visar 36 publikationer

2017

Electronic structure of (Ga,Mn)As revisited

Janusz Kanski, Lars Ilver, K. Karlsson et al
New Journal of Physics. Vol. 19 (Feb.), p. Article no. 023006 -
Artikel i vetenskaplig tidskrift
2016

Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES

A. D. Bouravleuv, L. L. Lev, C. Piamonteze et al
Nanotechnology. Vol. 27 (42), p. 425706-
Artikel i vetenskaplig tidskrift
2014

Effects of nonuniform Mn distribution in (Ga,Mn)As

I. Ulfat, Janusz Kanski, Lars Ilver et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 89 (4), p. art no 045312-
Artikel i vetenskaplig tidskrift
2013

Electron correlations in MnxGa1-xAs as seen by resonant electron spectroscopy and dynamical mean field theory

I. Di Marco, P. Thunstrom, M. I. Katsnelson et al
Nature Communications. Vol. 4, p. 6-
Artikel i vetenskaplig tidskrift
2012

Mn-induced modifications of Ga 3d photoemission from (Ga, Mn) As: evidence for long range effects

Janusz Kanski, Intikhab Ulfat, Lars Ilver et al
Journal of Physics Condensed Matter. Vol. 24 (43)
Artikel i vetenskaplig tidskrift
2012

Electron Spectroscopic Studies of Homogenous (GaMn)As layers

Intikhab Ulfat, Johan Adell, P. Pal et al
Advanced Materials Research. Vol. 463-464, p. 380-384
Paper i proceeding
2012

Post-growth annealing of (Ga,Mn)As under Sb capping

Intikhab Ulfat, Johan Adell, P. Pal et al
Applied Mechanics and Materials. Vol. 243-246, p. 243-246
Paper i proceeding
2011

Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B

Johan Adell, Intikhab Ulfat, J. Sadowski et al
Solid State Communications. Vol. 151 (11), p. 850-854
Artikel i vetenskaplig tidskrift
2011

Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As

Johan Adell, Intikhab Ulfat, Lars Ilver et al
Journal of Physics Condensed Matter. Vol. 23 (8)
Artikel i vetenskaplig tidskrift
2011

Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

P. Laukkanen, M. P. J. Punkkinen, J. Lang et al
Applied Physics Letters. Vol. 98 (23)
Artikel i vetenskaplig tidskrift
2011

Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

J. J. K. Lang, P. Laukkanen, M. P. J. Punkkinen et al
Surface Science. Vol. 605 (9-10), p. 883-888
Artikel i vetenskaplig tidskrift
2010

As3d core level studies of (GaMn)As annealed under As capping

Intikhab Ulfat, Johan Adell, J. Sadowski et al
Surface Science. Vol. 604 (2), p. 125-128
Artikel i vetenskaplig tidskrift
2009

Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances

C. J. Glover, T. Schmitt, M. Mattesini et al
Journal of Electron Spectroscopy and Related Phenomena. Vol. 173 (2-3), p. 103-107
Artikel i vetenskaplig tidskrift
2009

Formation of epitaxial MnBi layers on (GaMn)As

Johan Adell, Martin Adell, Intikhab Ulfat et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 80 (7), p. 075204-
Artikel i vetenskaplig tidskrift
2008

Photoelectron spectroscopic studies of ultra-thin CuPc and PTCDA layers on Cu(100)

Måns Andreasson, Maria Tengelin-Nilsson, Lars Ilver et al
Synthetic Metals. Vol. 158 (1-2), p. 45-49
Artikel i vetenskaplig tidskrift
2007

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

J. Sadowski, P. Dluzewski, S. Kret et al
Nano Letters. Vol. 7, p. 2724-
Artikel i vetenskaplig tidskrift
2007

Mn enriched surface of (GaMn)As layers annealed under arsenic capping

Martin Adell, Johan Adell, Janusz Kanski et al
Physical Review B. Vol. 75, p. 54415-
Artikel i vetenskaplig tidskrift
2006

How to make GaMnAs with high ferromagnetic phase transition temperature

J. Sadowski, J.A. Domagala, Janusz Kanski et al
Materials Science Poland. Vol. 24, p. 617-
Artikel i vetenskaplig tidskrift
2006

Photoemission study of the valence band offset between LT-GaAs and (GaMn)As

Martin Adell, Johan Adell, Lars Ilver et al
Applied Physics Letters. Vol. 89, p. 172509-
Artikel i vetenskaplig tidskrift
2006

Organic molecular beam deposition system and initial studies of organic layer growth

Måns Andreasson, Lars Ilver, Janusz Kanski et al
Physica Scripta. Vol. T126, p. 1-5
Artikel i vetenskaplig tidskrift
2006

Creation of a metallic channel at the Sn/InAs(111)B surface studied using synchrotron-radiation photoelectron spectroscopy

K. Szamota-Leandersson, M. Göthelid, Janusz Kanski et al
Physical Rewiev B. Vol. 74, p. 205406-
Artikel i vetenskaplig tidskrift
2005

Solid Phase Epitaxy of Feromagnetic MnAs layer and Quantum Dots on Annealed GaMnAs

J. Sadowski, Janusz Kanski, Martin Adell et al
Acta Phys Polonica A. Vol. 108, p. 851-858
Artikel i vetenskaplig tidskrift
2005

Importance of ITO surface conditions for the interaction with thin CuPc layers

Måns Andreasson, Maria Tengelin-Nilsson, Thorvald Andersson et al
Organic Electronics: physics, materials, applications (6), p. 175-181
Artikel i vetenskaplig tidskrift
2005

Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy

B.J. Kowalski, I.A. Kowalik, R.J. Iwanowski et al
Thin Solid Films. Vol. 476, p. 396-
Artikel i vetenskaplig tidskrift
2005

Influence of annealing parameters on the ferromagnetic properties of optimally passivated (GaMn)As epilayers

V. Stanciu, O. Wilhelmsson, U. Bexell et al
Physical Review B. Vol. 72, p. 125324 -
Artikel i vetenskaplig tidskrift
2005

Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

Martin Adell, Janusz Kanski, Lars Ilver et al
Physical Review Letters. Vol. 94, p. 139701-
Artikel i vetenskaplig tidskrift
2005

GaSb/GaAs quantum dot systems: In situ synchrotron radiation x-ray photoelectron spectroscopy study

V. N. Strocov, G. E. Cirlin, J. Sadowski et al
Nanotechnology. Vol. 16 (8), p. 1326-1334
Artikel i vetenskaplig tidskrift
2005

Post-growth annealing of (Ga,Mn)As under As capping - an alternative way to increase Tc

Martin Adell, Lars Ilver, Janusz Kanski et al
Applied Physics Letters. Vol. 86, p. 112501-
Artikel i vetenskaplig tidskrift
2005

Importance of ITO surface conditions for the interaction with thin CuPc layers

M. Andreasson, Maria Tengelin-Nilsson, T.G. Andersson et al
Organic Electronics. Vol. 6, p. 175-
Paper i proceeding
2005

Mn on the surface of ZnO(0001) - a resonant photoemisson study

E Guziewicz, K Kopalko, J Sadowski et al
Physica Scripta. Vol. T115, p. 541-544
Artikel i vetenskaplig tidskrift
2005

Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

J. Sadowski, E. Janik, E. Lusakowska et al
Applied Physics Letters. Vol. 87, p. 263114-
Artikel i vetenskaplig tidskrift
2004

Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As

Martin Adell, Lars Ilver, Janusz Kanski et al
Physical Review B. Vol. 70, p. 125204-
Artikel i vetenskaplig tidskrift
2004

Electronic structure of GaN(000-1)-(1 x 1) surface

B.J. Kowalski, R.J. Iwanowski, J. Sadowski et al
Surface Science. Vol. 548, p. 220-
Artikel i vetenskaplig tidskrift
2004

Photoemission studies of Mg and Rb layers on Zn(0001).

A. Suchodolskis, V. Karpus, Janusz Kanski et al
Journal of Electron Spectroscophy and Related Phenomena. Vol. 137 (40), p. 189-
Artikel i vetenskaplig tidskrift
2004

A study of the surface structure and composition of annealed Ga0.96Mn0.04As(100)

A. Mikkelsen, J. Gustafson, J. Sadowski et al
Applied Surface Science. Vol. 222, p. 23-
Artikel i vetenskaplig tidskrift

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