Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Artikel i vetenskaplig tidskrift, 2011

Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.

Single crystal surfaces

radiation photoelectron spectroscopy

Ab initio calculations

surface

basis-set

Synchrotron

state

molecular-beam epitaxy

Gallium-arsenide (GaAs)

total-energy calculations

growth

metals

dynamics

Scanning-tunneling microscopy

Indium-arsenide (InAs)

method

Surface reconstruction

sn-doped gaas

augmented-wave

Författare

J. J. K. Lang

Turun yliopisto

P. Laukkanen

Turun yliopisto

Tampere University of Technology

M. P. J. Punkkinen

The Royal Institute of Technology (KTH)

Turun yliopisto

M. Ahola-Tuomi

Turun yliopisto

M. Kuzmin

Ioffe Institute

Turun yliopisto

V. Tuominen

Turun yliopisto

J. Dahl

Turun yliopisto

M. Tuominen

Turun yliopisto

R. E. Perala

Turun yliopisto

K. Schulte

Lunds Universitet

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

J. Sadowski

Institute of Physics of the Polish Academy of Sciences

Lunds Universitet

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

M. Guina

Tampere University of Technology

M. Pessa

Tampere University of Technology

K. Kokko

Turun yliopisto

B. Johansson

The Royal Institute of Technology (KTH)

Uppsala Universitet

L. Vitos

The Royal Institute of Technology (KTH)

Uppsala Universitet

Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences

I. J. Vayrynen

Turun yliopisto

Surface Science

0039-6028 (ISSN)

Vol. 605 883-888

Ämneskategorier

Fysikalisk kemi

DOI

10.1016/j.susc.2011.01.034