Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Artikel i vetenskaplig tidskrift, 2011
Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
Indium-arsenide (InAs)
surface
Surface reconstruction
radiation photoelectron spectroscopy
state
basis-set
method
Single crystal surfaces
total-energy calculations
molecular-beam epitaxy
Gallium-arsenide (GaAs)
Scanning-tunneling microscopy
augmented-wave
growth
metals
sn-doped gaas
Synchrotron
dynamics
Ab initio calculations
Författare
J. J. K. Lang
Turun Yliopisto
P. Laukkanen
Turun Yliopisto
Tammerfors tekniska universitet
M. P. J. Punkkinen
Kungliga Tekniska Högskolan (KTH)
Turun Yliopisto
M. Ahola-Tuomi
Turun Yliopisto
M. Kuzmin
Turun Yliopisto
Russian Academy of Sciences
V. Tuominen
Turun Yliopisto
J. Dahl
Turun Yliopisto
M. Tuominen
Turun Yliopisto
R. E. Perala
Turun Yliopisto
K. Schulte
Lunds universitet
Johan Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
J. Sadowski
Lunds universitet
Polish Academy of Sciences
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
M. Guina
Tammerfors tekniska universitet
M. Pessa
Tammerfors tekniska universitet
K. Kokko
Turun Yliopisto
B. Johansson
Kungliga Tekniska Högskolan (KTH)
Uppsala universitet
L. Vitos
Magyar Tudomanyos Akademia
Kungliga Tekniska Högskolan (KTH)
Uppsala universitet
I. J. Vayrynen
Turun Yliopisto
Surface Science
0039-6028 (ISSN)
Vol. 605 9-10 883-888Ämneskategorier
Fysikalisk kemi
DOI
10.1016/j.susc.2011.01.034