Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Artikel i vetenskaplig tidskrift, 2011

Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.

Indium-arsenide (InAs)

sn-doped gaas

Ab initio calculations

Gallium-arsenide (GaAs)

basis-set

Scanning-tunneling microscopy

dynamics

Single crystal surfaces

radiation photoelectron spectroscopy

molecular-beam epitaxy

Surface reconstruction

growth

state

augmented-wave

total-energy calculations

metals

surface

Synchrotron

method

Författare

J. J. K. Lang

Turun Yliopisto

P. Laukkanen

Tammerfors tekniska universitet

Turun Yliopisto

M. P. J. Punkkinen

Turun Yliopisto

Kungliga Tekniska Högskolan (KTH)

M. Ahola-Tuomi

Turun Yliopisto

M. Kuzmin

Russian Academy of Sciences

Turun Yliopisto

V. Tuominen

Turun Yliopisto

J. Dahl

Turun Yliopisto

M. Tuominen

Turun Yliopisto

R. E. Perala

Turun Yliopisto

K. Schulte

Lunds universitet

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

J. Sadowski

Lunds universitet

Institute of Physics of the Polish Academy of Sciences

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

M. Guina

Tammerfors tekniska universitet

M. Pessa

Tammerfors tekniska universitet

K. Kokko

Turun Yliopisto

B. Johansson

Kungliga Tekniska Högskolan (KTH)

Uppsala universitet

L. Vitos

Magyar Tudomanyos Akademia

Uppsala universitet

Kungliga Tekniska Högskolan (KTH)

I. J. Vayrynen

Turun Yliopisto

Surface Science

0039-6028 (ISSN)

Vol. 605 9-10 883-888

Ämneskategorier

Fysikalisk kemi

DOI

10.1016/j.susc.2011.01.034