Johan Adell

Visar 18 publikationer

2012

Electron Spectroscopic Studies of Homogenous (GaMn)As layers

Intikhab Ulfat, Johan Adell, P. Pal et al
Advanced Materials Research. Vol. 463-464, p. 380-384
Paper i proceeding
2012

Post-growth annealing of (Ga,Mn)As under Sb capping

Intikhab Ulfat, Johan Adell, P. Pal et al
Applied Mechanics and Materials. Vol. 243-246, p. 243-246
Paper i proceeding
2011

Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B

Johan Adell, Intikhab Ulfat, J. Sadowski et al
Solid State Communications. Vol. 151 (11), p. 850-854
Artikel i vetenskaplig tidskrift
2011

Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As

Johan Adell, Intikhab Ulfat, Lars Ilver et al
Journal of Physics Condensed Matter. Vol. 23 (8)
Artikel i vetenskaplig tidskrift
2011

Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

P. Laukkanen, M. P. J. Punkkinen, J. Lang et al
Applied Physics Letters. Vol. 98 (23)
Artikel i vetenskaplig tidskrift
2011

Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

J. J. K. Lang, P. Laukkanen, M. P. J. Punkkinen et al
Surface Science. Vol. 605 (9-10), p. 883-888
Artikel i vetenskaplig tidskrift
2010

Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model

P. Laukkanen, M. P. J. Punkkinen, N. Rasanen et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 81 (3)
Artikel i vetenskaplig tidskrift
2010

As3d core level studies of (GaMn)As annealed under As capping

Intikhab Ulfat, Johan Adell, J. Sadowski et al
Surface Science. Vol. 604 (2), p. 125-128
Artikel i vetenskaplig tidskrift
2010

Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure

B. J. Kowalski, M. A. Pietrzyk, W. Knoff et al
Physics Procedia. Vol. 3 (2), p. 1357-1362
Artikel i vetenskaplig tidskrift
2010

Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces

P. Laukkanen, M. P. J. Punkkinen, M. Ahola-Tuomi et al
Journal of Electron Spectroscopy and Related Phenomena. Vol. 177 (1), p. 52-57
Artikel i vetenskaplig tidskrift
2009

Formation of epitaxial MnBi layers on (GaMn)As

Johan Adell, Martin Adell, Intikhab Ulfat et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 80 (7), p. 075204-
Artikel i vetenskaplig tidskrift
2008

Anomalous Bismuth-Stabilized (2×1) Reconstructions on GaAs(100) and InP(100) Surfaces

P. Laukkanen, MJP Punkkinen, H. -P. Komsa et al
Physical Review Letters. Vol. 100, p. 086101-
Artikel i vetenskaplig tidskrift
2008

Bismuth-stabilized (2×1) and (2×4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunnelingmicroscopy study

MJP Punkkinen, P. Laukkanen, H. -P. Komsa et al
Physical Review B. Vol. 78, p. 195304-
Artikel i vetenskaplig tidskrift
2007

A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy

P. Laukkanen, M. Ahola-Tuomi, Johan Adell et al
Surface Science. Vol. 601, p. 3395-
Artikel i vetenskaplig tidskrift
2007

Mn enriched surface of (GaMn)As layers annealed under arsenic capping

Martin Adell, Johan Adell, Janusz Kanski et al
Physical Review B. Vol. 75, p. 54415-
Artikel i vetenskaplig tidskrift
2006

Photoemission study of the valence band offset between LT-GaAs and (GaMn)As

Martin Adell, Johan Adell, Lars Ilver et al
Applied Physics Letters. Vol. 89, p. 172509-
Artikel i vetenskaplig tidskrift

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