As3d core level studies of (GaMn)As annealed under As capping
Artikel i vetenskaplig tidskrift, 2010
The surface of a Ga(0.95)Mn(0.05)As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.
Core level photoemission
As3d spectrum
Post-growth annealing
(GaMn)As
Författare
Intikhab Ulfat
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Johan Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
J. Sadowski
Lunds universitet
Polish Academy of Sciences
Lars Ilver
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Surface Science
0039-6028 (ISSN)
Vol. 604 2 125-128Ämneskategorier
Fysik
Den kondenserade materiens fysik
DOI
10.1016/j.susc.2009.10.029