As3d core level studies of (GaMn)As annealed under As capping
Artikel i vetenskaplig tidskrift, 2010

The surface of a Ga(0.95)Mn(0.05)As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.

(GaMn)As

Post-growth annealing

Core level photoemission

As3d spectrum

Författare

Intikhab Ulfat

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

J. Sadowski

Lunds universitet

Institute of Physics of the Polish Academy of Sciences

Lars Ilver

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Surface Science

0039-6028 (ISSN)

Vol. 604 2 125-128

Ämneskategorier

Fysik

Den kondenserade materiens fysik

DOI

10.1016/j.susc.2009.10.029