As3d core level studies of (GaMn)As annealed under As capping
Journal article, 2010
The surface of a Ga(0.95)Mn(0.05)As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.
Core level photoemission
As3d spectrum
Post-growth annealing
(GaMn)As
Author
Intikhab Ulfat
Chalmers, Applied Physics, Solid State Physics
Johan Adell
Chalmers, Applied Physics, Solid State Physics
J. Sadowski
Lund University
Polish Academy of Sciences
Lars Ilver
Chalmers, Applied Physics, Solid State Physics
Janusz Kanski
Chalmers, Applied Physics, Solid State Physics
Surface Science
0039-6028 (ISSN)
Vol. 604 2 125-128Subject Categories
Physical Sciences
Condensed Matter Physics
DOI
10.1016/j.susc.2009.10.029