Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
Artikel i vetenskaplig tidskrift, 2010

We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.

Surface reconstruction

TOTAL-ENERGY CALCULATIONS

spectroscopy

Indium antimonide (InSb)

METHOD

BASIS-SET

ADSORPTION

Indium

GAAS(001) SURFACE

Surface core-level shift (SCLS)

AUGMENTED-WAVE

COMPOUND SEMICONDUCTORS

PHOTOEMISSION

Synchrotron radiation photoelectron

INITIO MOLECULAR-DYNAMICS

Ab initio calculations

CHARGE-TRANSFER

RECONSTRUCTION

arsenide (InAs)

Författare

P. Laukkanen

Turun yliopisto

Tammerfors tekniska universitet

M. P. J. Punkkinen

Turun yliopisto

Kungliga Tekniska Högskolan (KTH)

M. Ahola-Tuomi

Turun yliopisto

J. Lang

Turun yliopisto

K. Schulte

Lunds universitet

A. Pietzsch

Lunds universitet

M. Kuzmin

Ioffe Institute

Turun yliopisto

J. Sadowski

Lunds universitet

Institute of Physics of the Polish Academy of Sciences

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

R. E. Perala

Turun yliopisto

M. Ropo

Abo Akademi University

K. Kokko

Turun yliopisto

L. Vitos

Uppsala universitet

Kungliga Tekniska Högskolan (KTH)

Magyar Tudomanyos Akademia

B. Johansson

Dalian University of Technology

Uppsala universitet

Kungliga Tekniska Högskolan (KTH)

M. Pessa

Tammerfors tekniska universitet

I. J. Vayrynen

Turun yliopisto

Journal of Electron Spectroscopy and Related Phenomena

0368-2048 (ISSN)

Vol. 177 52-57

Ämneskategorier

Annan teknik

DOI

10.1016/j.elspec.2010.02.002