Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
Artikel i vetenskaplig tidskrift, 2010

We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.

spectroscopy

GAAS(001) SURFACE

COMPOUND SEMICONDUCTORS

INITIO MOLECULAR-DYNAMICS

Ab initio calculations

Indium

BASIS-SET

RECONSTRUCTION

Surface core-level shift (SCLS)

METHOD

Surface reconstruction

Synchrotron radiation photoelectron

AUGMENTED-WAVE

CHARGE-TRANSFER

TOTAL-ENERGY CALCULATIONS

Indium antimonide (InSb)

PHOTOEMISSION

arsenide (InAs)

ADSORPTION

Författare

P. Laukkanen

Turun Yliopisto

Tammerfors tekniska universitet

M. P. J. Punkkinen

Kungliga Tekniska Högskolan (KTH)

Turun Yliopisto

M. Ahola-Tuomi

Turun Yliopisto

J. Lang

Turun Yliopisto

K. Schulte

Lunds universitet

A. Pietzsch

Lunds universitet

M. Kuzmin

Turun Yliopisto

Russian Academy of Sciences

J. Sadowski

Lunds universitet

Institute of Physics of the Polish Academy of Sciences

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

R. E. Perala

Turun Yliopisto

M. Ropo

Åbo Akademi

K. Kokko

Turun Yliopisto

L. Vitos

Magyar Tudomanyos Akademia

Kungliga Tekniska Högskolan (KTH)

Uppsala universitet

B. Johansson

Kungliga Tekniska Högskolan (KTH)

Uppsala universitet

Dalian University of Technology

M. Pessa

Tammerfors tekniska universitet

I. J. Vayrynen

Turun Yliopisto

Journal of Electron Spectroscopy and Related Phenomena

0368-2048 (ISSN)

Vol. 177 1 52-57

Ämneskategorier

Annan teknik

DOI

10.1016/j.elspec.2010.02.002

Mer information

Senast uppdaterat

2018-08-07