Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
Journal article, 2010
We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.
ADSORPTION
PHOTOEMISSION
Surface reconstruction
Surface core-level shift (SCLS)
INITIO MOLECULAR-DYNAMICS
METHOD
AUGMENTED-WAVE
Indium
spectroscopy
RECONSTRUCTION
COMPOUND SEMICONDUCTORS
TOTAL-ENERGY CALCULATIONS
GAAS(001) SURFACE
BASIS-SET
arsenide (InAs)
Synchrotron radiation photoelectron
CHARGE-TRANSFER
Ab initio calculations
Indium antimonide (InSb)
Author
P. Laukkanen
Tampere University of Technology
University of Turku
M. P. J. Punkkinen
University of Turku
Royal Institute of Technology (KTH)
M. Ahola-Tuomi
University of Turku
J. Lang
University of Turku
K. Schulte
Lund University
A. Pietzsch
Lund University
M. Kuzmin
University of Turku
Russian Academy of Sciences
J. Sadowski
Polish Academy of Sciences
Lund University
Johan Adell
Chalmers, Applied Physics, Solid State Physics
R. E. Perala
University of Turku
M. Ropo
Åbo Akademi
K. Kokko
University of Turku
L. Vitos
Royal Institute of Technology (KTH)
Hungarian Academy of Sciences
Uppsala University
B. Johansson
Royal Institute of Technology (KTH)
Dalian University of Technology
Uppsala University
M. Pessa
Tampere University of Technology
I. J. Vayrynen
University of Turku
Journal of Electron Spectroscopy and Related Phenomena
0368-2048 (ISSN)
Vol. 177 1 52-57Subject Categories
Other Engineering and Technologies
DOI
10.1016/j.elspec.2010.02.002