Post-growth annealing of (Ga,Mn)As under Sb capping
Paper i proceeding, 2012

(Ga,Mn)As is a model diluted ferromagnet system in which the atomic spins of Mn ions are ferromagnetically arranged due to the exchange interaction with valence band holes. An important tecchnological concern regarding this system has been approaches that might result in reduction of the density of Mn interstitial and increase in the content of Mn in order to make the system practically feasible. To accomplish the objective we report the results of our recent synchrotron radiation based spectroscopic investigations concening annealing induced modification of as-grown (Ga,Mn)As layers covered with Sb capping.

Synchrotron radiation

Ga Mn As

Annealing induced modifications

Författare

Intikhab Ulfat

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

P. Pal

National Physical Laboratory India

J. Sadowski

Lunds universitet

Lars Ilver

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Applied Mechanics and Materials

1660-9336 (ISSN)

Vol. 243-246 243-246

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.4028/www.scientific.net/AMM.229-231.243

ISBN

9783037855102