Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
Artikel i vetenskaplig tidskrift, 2011

Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.

gaas(001)

interface

molecular-beam epitaxy

gaas

silicon

passivation

Författare

P. Laukkanen

Turun Yliopisto

Tammerfors tekniska universitet

M. P. J. Punkkinen

Ioffe Institute

Turun Yliopisto

Kungliga Tekniska Högskolan (KTH)

J. Lang

Turun Yliopisto

M. Tuominen

Turun Yliopisto

M. Kuzmin

Turun Yliopisto

Lunds universitet

V. Tuominen

Turun Yliopisto

J. Dahl

Turun Yliopisto

Johan Adell

Institute of Physics of the Polish Academy of Sciences

J. Sadowski

Institute of Physics of the Polish Academy of Sciences

Chalmers University of Technology

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

V. Polojarvi

Tammerfors tekniska universitet

J. Pakarinen

Teknologian Tutkimuskeskus (VTT)

K. Kokko

Turun Yliopisto

M. Guina

Tammerfors tekniska universitet

M. Pessa

Tammerfors tekniska universitet

I. J. Vayrynen

Turun Yliopisto

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 98 231908

Ämneskategorier

Annan teknik

DOI

10.1063/1.3596702