Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
Artikel i vetenskaplig tidskrift, 2011
Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
gaas(001)
interface
passivation
silicon
molecular-beam epitaxy
gaas
Författare
P. Laukkanen
Turun Yliopisto
Tammerfors tekniska universitet
M. P. J. Punkkinen
Russian Academy of Sciences
Kungliga Tekniska Högskolan (KTH)
Turun Yliopisto
J. Lang
Turun Yliopisto
M. Tuominen
Turun Yliopisto
M. Kuzmin
Lunds universitet
Turun Yliopisto
V. Tuominen
Turun Yliopisto
J. Dahl
Turun Yliopisto
Johan Adell
Polish Academy of Sciences
J. Sadowski
Polish Academy of Sciences
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
V. Polojarvi
Tammerfors tekniska universitet
J. Pakarinen
Teknologian Tutkimuskeskus (VTT)
K. Kokko
Turun Yliopisto
M. Guina
Tammerfors tekniska universitet
M. Pessa
Tammerfors tekniska universitet
I. J. Vayrynen
Turun Yliopisto
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 98 23 231908Ämneskategorier
Annan teknik
DOI
10.1063/1.3596702