Formation of epitaxial MnBi layers on (GaMn)As
Artikel i vetenskaplig tidskrift, 2009
The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before surface degradation occurs. The MnBi layer appears to be free from intermixed As.
Författare
Johan Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Martin Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Intikhab Ulfat
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Lars Ilver
Chalmers, Teknisk fysik, Fasta tillståndets fysik
J. Sadowski
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Physical Review B - Condensed Matter and Materials Physics
24699950 (ISSN) 24699969 (eISSN)
Vol. 80 7 075204-Ämneskategorier
Fysik
Den kondenserade materiens fysik
DOI
10.1103/PhysRevB.80.075204