Formation of epitaxial MnBi layers on (GaMn)As
Artikel i vetenskaplig tidskrift, 2009

The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before surface degradation occurs. The MnBi layer appears to be free from intermixed As.

Författare

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Martin Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Intikhab Ulfat

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Lars Ilver

Chalmers, Teknisk fysik, Fasta tillståndets fysik

J. Sadowski

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 80 075204-

Ämneskategorier

Fysik

Den kondenserade materiens fysik

DOI

10.1103/PhysRevB.80.075204