Martin Adell

Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances

2009

Formation of epitaxial MnBi layers on (GaMn)As

A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy

MnAs dots grown on GaN( 000(1)over-bar)-(1x1) surface

Mn enriched surface of (GaMn)As layers annealed under arsenic capping

Valence band photoemission from in-situ grown GaAs(100)-c(4×4)

Photoemission study of the valence band offset between LT-GaAs and (GaMn)As

Electronic and structural properties of the InP(100)(2x4) surface studied by core-level photoemission and scanning tunneling microscopy

Structural properties of Bi-terminated GaAs(0 0 1) surface

Preparation and Characterization of the Magnetic Semiconductor (GaMn)As

Electron surface states in short-period superlattices: (GaAs)2/(AlAs)2(100)-c(4x4)

Solid Phase Epitaxy of Feromagnetic MnAs layer and Quantum Dots on Annealed GaMnAs

Influence of annealing parameters on the ferromagnetic properties of optimally passivated (GaMn)As epilayers

Post-growth annealing of (Ga,Mn)As under As capping - an alternative way to increase Tc

Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

Preparation and characterization of the magnetic semiconductor (GaMn)As

Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As

Preparation and characterization of the magnetic semicondutor (GaMn)As