Formation of epitaxial MnBi layers on (GaMn)As
Journal article, 2009

The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before surface degradation occurs. The MnBi layer appears to be free from intermixed As.

Author

Johan Adell

Chalmers, Applied Physics, Solid State Physics

Martin Adell

Chalmers, Applied Physics, Solid State Physics

Intikhab Ulfat

Chalmers, Applied Physics, Solid State Physics

Lars Ilver

Chalmers, Applied Physics, Solid State Physics

J. Sadowski

Janusz Kanski

Chalmers, Applied Physics, Solid State Physics

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 80 7 075204-

Subject Categories

Physical Sciences

Condensed Matter Physics

DOI

10.1103/PhysRevB.80.075204

More information

Created

10/7/2017