Formation of epitaxial MnBi layers on (GaMn)As
Journal article, 2009
The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before surface degradation occurs. The MnBi layer appears to be free from intermixed As.
Author
Johan Adell
Chalmers, Applied Physics, Solid State Physics
Martin Adell
Chalmers, Applied Physics, Solid State Physics
Intikhab Ulfat
Chalmers, Applied Physics, Solid State Physics
Lars Ilver
Chalmers, Applied Physics, Solid State Physics
J. Sadowski
Janusz Kanski
Chalmers, Applied Physics, Solid State Physics
Physical Review B - Condensed Matter and Materials Physics
24699950 (ISSN) 24699969 (eISSN)
Vol. 80 7 075204-Subject Categories
Physical Sciences
Condensed Matter Physics
DOI
10.1103/PhysRevB.80.075204