Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
Artikel i vetenskaplig tidskrift, 2011

Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.

Författare

Johan Adell

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Intikhab Ulfat

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Lars Ilver

Chalmers, Teknisk fysik, Fasta tillståndets fysik

J. Sadowski

Lunds universitet

Institute of Physics of the Polish Academy of Sciences

Krister Karlsson

Högskolan i Skövde

Janusz Kanski

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Journal of Physics Condensed Matter

0953-8984 (ISSN)

Vol. 23 8 085003

Ämneskategorier

Materialteknik

DOI

10.1088/0953-8984/23/8/085003