Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
Artikel i vetenskaplig tidskrift, 2011
Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.
Författare
Johan Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Intikhab Ulfat
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Lars Ilver
Chalmers, Teknisk fysik, Fasta tillståndets fysik
J. Sadowski
Lunds universitet
Polish Academy of Sciences
Krister Karlsson
Högskolan i Skövde
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Journal of Physics Condensed Matter
0953-8984 (ISSN) 1361-648X (eISSN)
Vol. 23 8 085003Ämneskategorier
Materialteknik
DOI
10.1088/0953-8984/23/8/085003