Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
Journal article, 2011

Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.

Author

Johan Adell

Chalmers, Applied Physics, Solid State Physics

Intikhab Ulfat

Chalmers, Applied Physics, Solid State Physics

Lars Ilver

Chalmers, Applied Physics, Solid State Physics

J. Sadowski

Lund University

Polish Academy of Sciences

Krister Karlsson

University of Skövde

Janusz Kanski

Chalmers, Applied Physics, Solid State Physics

Journal of Physics Condensed Matter

0953-8984 (ISSN)

Vol. 23 8 085003

Subject Categories

Materials Engineering

DOI

10.1088/0953-8984/23/8/085003

More information

Latest update

10/30/2018