Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Journal article, 2011
Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
Indium-arsenide (InAs)
surface
Surface reconstruction
radiation photoelectron spectroscopy
state
basis-set
method
Single crystal surfaces
total-energy calculations
molecular-beam epitaxy
Gallium-arsenide (GaAs)
Scanning-tunneling microscopy
augmented-wave
growth
metals
sn-doped gaas
Synchrotron
dynamics
Ab initio calculations
Author
J. J. K. Lang
University of Turku
P. Laukkanen
University of Turku
Tampere University of Technology
M. P. J. Punkkinen
Royal Institute of Technology (KTH)
University of Turku
M. Ahola-Tuomi
University of Turku
M. Kuzmin
University of Turku
Russian Academy of Sciences
V. Tuominen
University of Turku
J. Dahl
University of Turku
M. Tuominen
University of Turku
R. E. Perala
University of Turku
K. Schulte
Lund University
Johan Adell
Chalmers, Applied Physics, Solid State Physics
J. Sadowski
Lund University
Polish Academy of Sciences
Janusz Kanski
Chalmers, Applied Physics, Solid State Physics
M. Guina
Tampere University of Technology
M. Pessa
Tampere University of Technology
K. Kokko
University of Turku
B. Johansson
Royal Institute of Technology (KTH)
Uppsala University
L. Vitos
Hungarian Academy of Sciences
Royal Institute of Technology (KTH)
Uppsala University
I. J. Vayrynen
University of Turku
Surface Science
0039-6028 (ISSN)
Vol. 605 9-10 883-888Subject Categories
Physical Chemistry
DOI
10.1016/j.susc.2011.01.034